TSM9933DCS RLG

Specifications

Fabrika Tedarik Süresi

28 Weeks

Vgsth Max Id

1.4V @ 250μA

Fet Feature

Standard

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Gate Charge Qg Max Vgs

8.5nC @ 4.5V

Transistor Element Material

SILICON

Ambalaj

Digi-Reel®

Rds On Max Id Vgs

60m Ω @ 4.7A, 4.5V

Power Max

2W

Drainsource On Resistancemax

0.06Ohm

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

4.7A

Yüzey Montaj

YES

Fet Type

2 P-Channel (Dual)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

20A

Ds Breakdown Voltagemin

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

8

Terminal Formu

GULL WING

Drain To Source Voltage Vdss

20V

Yayın Yılı

2015

Nem Hassasiyeti (MSL)

3 (168 Hours)

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

4.7A Tc

Number Of Elements

2

Jesd30 Code

R-PDSO-G8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Input Capacitance Ciss Max Vds

640pF @ 10V