Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 28 Weeks
- Vgsth Max Id
- 1.4V @ 250μA
- Fet Feature
- Standard
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Gate Charge Qg Max Vgs
- 8.5nC @ 4.5V
- Transistor Element Material
- SILICON
- Ambalaj
- Digi-Reel®
- Rds On Max Id Vgs
- 60m Ω @ 4.7A, 4.5V
- Power Max
- 2W
- Drainsource On Resistancemax
- 0.06Ohm
- RoHS Durumu
- ROHS3 Compliant
- Drain Currentmax Abs Id
- 4.7A
- Yüzey Montaj
- YES
- Fet Type
- 2 P-Channel (Dual)
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Montaj Tipi
- Surface Mount
- Pulsed Drain Currentmax Idm
- 20A
- Ds Breakdown Voltagemin
- 20V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 8
- Terminal Formu
- GULL WING
- Drain To Source Voltage Vdss
- 20V
- Yayın Yılı
- 2015
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Parça Durumu
- Active
- Operating Mode
- ENHANCEMENT MODE
- Current Continuous Drain Id25
- 4.7A Tc
- Number Of Elements
- 2
- Jesd30 Code
- R-PDSO-G8
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance Ciss Max Vds
- 640pF @ 10V
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