TSM8568CS RLG

Specifications

Pulsed Drain Currentmax Idm

60A

Montaj Tipi

Surface Mount

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Ds Breakdown Voltagemin

30V

Terminal Pozisyonu

DUAL

Yayın Yılı

2016

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

30V

Terminal Formu

GULL WING

Terminal Sayısı

8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jesd30 Code

R-PDSO-G8

Input Capacitance Ciss Max Vds

646pF @ 15V 1089pF @ 15V

Number Of Elements

2

Current Continuous Drain Id25

15A Tc 13A Tc

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Avalanche Energy Rating Eas

21.6 mJ

Tepe Reflow Süresi (maks. sn)

30

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Digi-Reel®

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

7nC @ 4.5V, 11nC @ 4.5V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fet Feature

Standard

Vgsth Max Id

2.5V @ 250μA

Fabrika Tedarik Süresi

20 Weeks

Power Max

6W

Rds On Max Id Vgs

16m Ω @ 8A, 10V, 24m Ω @ 7A, 10V

Tepe Reflow Sıcaklığı (°C)

260

Drainsource On Resistancemax

0.02Ohm

Fet Type

N and P-Channel

Yüzey Montaj

YES

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

8A