TSM680P06DPQ56 RLG

Specifications

Fet Feature

Standard

Vgsth Max Id

2.5V @ 250μA

Kılıf / Paket

8-PowerTDFN

Fabrika Tedarik Süresi

20 Weeks

Ambalaj

Digi-Reel®

Gate Charge Qg Max Vgs

16.4nC @ 10V

Transistor Element Material

SILICON

Rds On Max Id Vgs

68m Ω @ 6A, 10V

Power Max

3.5W

Drainsource On Resistancemax

0.068Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drain Currentmax Abs Id

12A

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Fet Type

2 P-Channel (Dual)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

48A

Ds Breakdown Voltagemin

60V

Çalışma Sıcaklığı

-55°C~150°C TJ

Case Connection

DRAIN

Terminal Formu

FLAT

Terminal Sayısı

6

Yayın Yılı

2015

Drain To Source Voltage Vdss

60V

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

7.2 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

12A Tc

Number Of Elements

2

Jesd30 Code

R-PDSO-F6

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Input Capacitance Ciss Max Vds

870pF @ 30V

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE