Volume pricing
- 1+ pcs$1.12
- 10+ pcs$1.06
- 100+ pcs$1.00
- 500+ pcs$0.94
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Ds Breakdown Voltagemin
- 60V
- Pulsed Drain Currentmax Idm
- 30A
- Montaj Tipi
- Surface Mount
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating Mode
- ENHANCEMENT MODE
- Parça Durumu
- Active
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Jesd30 Code
- R-PDSO-G8
- Input Capacitance Ciss Max Vds
- 910pF @ 24V
- Number Of Elements
- 2
- Current Continuous Drain Id25
- 4.5A Ta
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Tepe Reflow Süresi (maks. sn)
- 30
- Transistor Application
- SWITCHING
- Drain To Source Voltage Vdss
- 60V
- Yayın Yılı
- 2010
- Terminal Sayısı
- 8
- Terminal Formu
- GULL WING
- Power Max
- 2.4W
- Rds On Max Id Vgs
- 55m Ω @ 4.5A, 10V
- Transistor Element Material
- SILICON
- Gate Charge Qg Max Vgs
- 18nC @ 10V
- Ambalaj
- Digi-Reel®
- Fabrika Tedarik Süresi
- 20 Weeks
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Fet Feature
- Standard
- Vgsth Max Id
- 3V @ 250μA
- HTS Kodu
- 8541.29.00.95
- Fet Type
- 2 N-Channel (Dual)
- Yüzey Montaj
- YES
- Drain Currentmax Abs Id
- 4.5A
- RoHS Durumu
- ROHS3 Compliant
- Additional Feature
- ULTRA-LOW RESISTANCE
- ECCN Kodu
- EAR99
- Tepe Reflow Sıcaklığı (°C)
- 260
- Drainsource On Resistancemax
- 0.055Ohm
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