TSM076NH04LDCR RLG

Specifications

RoHS

Details

Fet Feature

Standard

Ürün Durumu

Active

Fet Type

2 N-Channel (Dual)

Pd Power Dissipation

55.6 W

Minimum Operating Temperature

- 55 C

Tedarikçi Cihaz Paketi

8-PDFNU (5x6)

Forward Transconductance Min

133.3 S

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

2.2 V

Vgs Gatesource Voltage

- 16 V, + 16 V

Id Continuous Drain Current

34 A

Typical Turnon Delay Time

7.3 ns

Number Of Channels

2 Channel

Channel Mode

Enhancement

Gate Charge Qg Max Vgs

22.4nC @ 10V

Transistor Type

2 N-Channel

Input Capacitance Ciss Max Vds

1344pF @ 25V

Ürün Tipi

MOSFET

Typical Turnoff Delay Time

23.6 ns

Technology

Si

Kılıf / Paket

8-PowerTDFN

Tradename

PerFET

Maks. Çalışma Sıcaklığı

+ 175 C

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Drain To Source Voltage Vdss

40V

Part Aliases

TSM076NH04LDCR

Rise Time

50.1 ns

Current Continuous Drain Id25

14A (Ta), 34A (Tc)

Ambalaj

MouseReel

Rds On Max Id Vgs

7.6mOhm @ 17A, 10V

Qg Gate Charge

10.7 nC

Montaj Stili

SMD/SMT

Montaj Tipi

Surface Mount

Vds Drainsource Breakdown Voltage

40 V

Rds On Drainsource Resistance

7.6 mOhms

Vgsth Max Id

2.2V @ 250μA

Power Max

55.6W (Tc)

Fabrika Paket Adedi

2500