TQM250NB06DCR RLG

Specifications

Typical Turnon Delay Time

4 ns

Rise Time

20 ns

Input Capacitance Ciss Max Vds

1398pF @ 30V

Number Of Channels

2 Channel

Montaj Tipi

Surface Mount, Wettable Flank

Montaj Stili

SMD/SMT

Tedarikçi Cihaz Paketi

8-PDFNU (5x6)

Vds Drainsource Breakdown Voltage

60 V

RoHS

Details

Gate Charge Qg Max Vgs

24nC @ 10V

Rds On Drainsource Resistance

25 mOhms

Ambalaj

MouseReel

Transistor Type

2 N-Channel

Part Aliases

TQM250NB06DCR

Fet Feature

Standard

Pd Power Dissipation

2.5 W

Power Max

2.5W (Ta), 58W (Tc)

Rds On Max Id Vgs

25mOhm @ 6A, 10V

Seri

Automotive, AEC-Q101

Ürün Durumu

Active

Drain To Source Voltage Vdss

60V

Channel Mode

Enhancement

Ürün Tipi

MOSFET

Current Continuous Drain Id25

6A (Ta), 30A (Tc)

Fabrika Paket Adedi

2500

Vgs Th Gatesource Threshold Voltage

3.8 V

Transistor Polarity

N Channel

Minimum Operating Temperature

- 55 C

Maks. Çalışma Sıcaklığı

+ 175 C

Continuous Drain Current Id

30A

Temel Ürün No

TQM250

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Forward Transconductance Min

27 S

Qg Gate Charge

24 nC

Vgs Gatesource Voltage

- 20 V, + 20 V

Id Continuous Drain Current

6 A

Channel Type

N Channel

Fet Type

2 N-Channel (Dual)

Typical Turnoff Delay Time

14 ns

Technology

Si