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ES1DFL RVG

Taiwan Semiconductor

ES1DFL RVG

RF Diodes

RoHS: Compliant

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Compliant

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Specifications

Mounting
Surface Mount
Operating Temperaturemin
-55 °C
Peak Reverse Current Ua
5
Diode Element Material
SILICON
Package Body Material
PLASTIC/EPOXY
Repetitive Peak Reverse Voltage
200
Ambalaj
Tape and Reel
Peak Reverse Repetitive Voltage V
200
Operating Temperaturemax
150 °C
Maximum Operating Temperature C
150
Eccn Us
EAR99
RoHS Durumu
Yes with exemptions
Pcb Changed
2
Risk Rank
5.55
Supplier Package
SOD-123FL
Lead Shape
Flat
Reverse Recovery Time
35
Configuration
Single
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Reflow Temperaturemax S
NOT SPECIFIED
Number Of Elements
1
Maximum Dc Reverse Voltage V
200
JESD-609 Kodu
e3
Reverse Recovery Timemax
0.035 µs
Diode Type
RECTIFIER DIODE
Peak Reverse Recovery Time Ns
35
Part Life Cycle Code
Active
Tip
Switching Diode
Terminal Formu
FLAT
Package Style
SMALL OUTLINE
Package Length
3.1(Max)
REACH Uyumluluk Kodu
compliant
Üretici Parça No
ES1DFLRVG
Package Shape
RECTANGULAR
Terminal Kaplaması
Matte Tin (Sn)
Maximum Continuous Forward Current A
1
Yüzey Montaj
YES
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
Pin Sayısı
2
Peak Forward Voltage V
1

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