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D2SB80 C2

Taiwan Semiconductor

D2SB80 C2

RF Diodes

RoHS: Compliant

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RoHS

Compliant

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Specifications

Mounting
Through Hole
Peak Reverse Current Ua
10
Breakdown Voltagemin
800 V
Number Of Terminals
4
Peak Nonrepetitive Forward Surge Current A
80
Parça Durumu
Active
Maximum Operating Temperature C
150
Forward Voltagemax Vf
1.1 V
Peak Average Forward Current A
2@Ta=50C
Reflow Temperaturemax S
NOT SPECIFIED
Pin Sayısı
4
JESD-609 Kodu
e3
Rohs Code
Yes
Package Style
IN-LINE
Number Of Phases
1
Package Body Material
PLASTIC/EPOXY
Additional Feature
UL RECOGNIZED
Pcb Changed
4
Jesd30 Code
R-PSIP-T4
Supplier Package
Case GBL
Package Shape
RECTANGULAR
Diode Type
BRIDGE RECTIFIER DIODE
Üretici Parça No
D2SB80C2
Peak Reverse Repetitive Voltage V
800
Operating Temperaturemax
150 °C
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
ECCN Kodu
EAR99
Terminal Kaplaması
Matte Tin (Sn)
Package Height
11.3(Max)
Terminal Formu
THROUGH-HOLE
HTS Kodu
8541.10.00.80
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
Diode Element Material
SILICON
Output Currentmax
2 A
Minimum Operating Temperature C
-55
Bridge Type
Single Phase
Configuration
Single
Operating Temperaturemin
-55 °C
Terminal Pozisyonu
SINGLE
Package Width
3.7(Max)

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