STS8DN6LF6AG

Specifications

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

60V

Vgsth Max Id

2.5V @ 250μA

Drainsource On Resistancemax

0.026Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Durumu

ROHS3 Compliant

Pulsed Drain Currentmax Idm

32A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Feature

Logic Level Gate

Terminal Formu

GULL WING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Current Continuous Drain Id25

8A Ta

Gate Charge Qg Max Vgs

27nC @ 10V

Power Dissipationmax Abs

3.2W

Rds On Max Id Vgs

24m Ω @ 4A, 10V

Ds Breakdown Voltagemin

60V

Seri

Automotive, AEC-Q101, STripFET™ F6

Terminal Sayısı

8

Jesd30 Code

R-PDSO-G8

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

20 Weeks

Çalışma Sıcaklığı

-55°C~175°C TJ

Operating Mode

ENHANCEMENT MODE

Yüzey Montaj

YES

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Power Max

3.2W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Input Capacitance Ciss Max Vds

1340pF @ 25V

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

72 mJ

Fet Type

2 N-Channel (Dual)

Temel Parça No

STS8DN

Number Of Elements

2

Drain Currentmax Abs Id

8A