Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fall Time Typ
- 3.5 ns
- Ambalaj
- Tape & Reel (TR)
- JESD-609 Kodu
- e4
- Tepe Reflow Süresi (maks. sn)
- 30
- RoHS Durumu
- ROHS3 Compliant
- Pulsed Drain Currentmax Idm
- 40A
- Terminal Formu
- GULL WING
- Fet Feature
- Logic Level Gate
- Vgsth Max Id
- 1V @ 250μA
- Montaj
- Surface Mount
- Transistor Element Material
- SILICON
- Drain To Source Voltage Vdss
- 30V
- ECCN Kodu
- EAR99
- Gate To Source Voltage Vgs
- 22V
- Max Power Dissipation
- 2.7W
- Rise Time
- 4.2ns
- Rds On Max Id Vgs
- 19m Ω @ 5A, 10V
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 5.4nC @ 4.5V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Radyasyon Dayanımı
- No
- Direnç
- 19MOhm
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fabrika Tedarik Süresi
- 14 Weeks
- Tepe Reflow Sıcaklığı (°C)
- 260
- Element Configuration
- Dual
- Terminal Sayısı
- 8
- Seri
- STripFET™ V
- Transistor Application
- SWITCHING
- Continuous Drain Current Id
- 10A
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Montaj Tipi
- Surface Mount
- Kurşunsuz
- Lead Free
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Input Capacitance Ciss Max Vds
- 724pF @ 25V
- Power Dissipation
- 2.7W
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
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