Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 2
- Drain To Source Breakdown Voltage
- 30V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation
- 2W
- Montaj Tipi
- Surface Mount
- Yükseklik
- 1.25mm
- Transistor Application
- SWITCHING
- Seri
- STripFET™ III
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- 150°C TJ
- Uzunluk
- 5mm
- Direnç
- 22MOhm
- Current Continuous Drain Id25
- 8A 5.4A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge Qg Max Vgs
- 10nC @ 5V
- Rds On Max Id Vgs
- 22m Ω @ 4A, 10V
- Gate To Source Voltage Vgs
- 16V
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- JESD-609 Kodu
- e3
- Reach Svhc
- No SVHC
- Drain Currentmax Abs Id
- 8A
- Terminal Pozisyonu
- DUAL
- Pin Sayısı
- 8
- Turn Off Delay Time
- 125 ns
- Temel Parça No
- STS8C5
- Fet Type
- N and P-Channel
- Input Capacitance Ciss Max Vds
- 857pF @ 25V
- Terminal Kaplaması
- Matte Tin (Sn)
- Kurşunsuz
- Lead Free
- Lifecycle Status
- NRND (Last Updated: 8 months ago)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Threshold Voltage
- 1.6V
- Continuous Drain Current Id
- 8A
- Parça Durumu
- Active
- Terminal Sayısı
- 8
- Tepe Reflow Sıcaklığı (°C)
- 260
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 8
- Rise Time
- 35ns
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