Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 23nC @ 5V
- Current Continuous Drain Id25
- 7A 4A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation
- 2W
- Rise Time
- 35ns
- Rds On Max Id Vgs
- 22m Ω @ 3.5A, 10V
- Terminal Sayısı
- 8
- Seri
- STripFET™
- Ds Breakdown Voltagemin
- 30V
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- 150°C TJ
- Tepe Reflow Sıcaklığı (°C)
- 260
- JESD-609 Kodu
- e4
- Ambalaj
- Tape & Reel (TR)
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Vgsth Max Id
- 2.5V @ 250μA
- Qualification Status
- Not Qualified
- Montaj
- Surface Mount
- Transistor Element Material
- SILICON
- Drain To Source Voltage Vdss
- 30V
- ECCN Kodu
- EAR99
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Drainsource On Resistancemax
- 0.026Ohm
- Tepe Reflow Süresi (maks. sn)
- 30
- Akım Değeri
- 7A
- RoHS Durumu
- Non-RoHS Compliant
- Terminal Formu
- GULL WING
- Fet Feature
- Logic Level Gate
- Fet Type
- N and P-Channel
- Temel Parça No
- STS7C4
- Number Of Elements
- 2
- Pin Sayısı
- 8
- Drain Currentmax Abs Id
- 7A
- Terminal Pozisyonu
- DUAL
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Obsolete
- Continuous Drain Current Id
- 4A
- Input Capacitance Ciss Max Vds
- 1050pF @ 25V
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