STS7C4F30L

Specifications

Pin Sayısı

8

Gate Charge Qg Max Vgs

23nC @ 5V

Current Continuous Drain Id25

7A 4A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation

2W

Rise Time

35ns

Rds On Max Id Vgs

22m Ω @ 3.5A, 10V

Terminal Sayısı

8

Seri

STripFET™

Ds Breakdown Voltagemin

30V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

150°C TJ

Tepe Reflow Sıcaklığı (°C)

260

JESD-609 Kodu

e4

Ambalaj

Tape & Reel (TR)

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Vgsth Max Id

2.5V @ 250μA

Qualification Status

Not Qualified

Montaj

Surface Mount

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

30V

ECCN Kodu

EAR99

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.026Ohm

Tepe Reflow Süresi (maks. sn)

30

Akım Değeri

7A

RoHS Durumu

Non-RoHS Compliant

Terminal Formu

GULL WING

Fet Feature

Logic Level Gate

Fet Type

N and P-Channel

Temel Parça No

STS7C4

Number Of Elements

2

Pin Sayısı

8

Drain Currentmax Abs Id

7A

Terminal Pozisyonu

DUAL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Continuous Drain Current Id

4A

Input Capacitance Ciss Max Vds

1050pF @ 25V