Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation
- 2W
- Montaj Tipi
- Surface Mount
- Number Of Elements
- 2
- Drain To Source Breakdown Voltage
- -30V
- Turn On Delay Time
- 25 ns
- ECCN Kodu
- EAR99
- Gate To Source Voltage Vgs
- 16V
- Drain To Source Voltage Vdss
- 30V
- Transistor Element Material
- SILICON
- JESD-609 Kodu
- e3
- Transistor Application
- SWITCHING
- Yükseklik
- 1.25mm
- Seri
- STripFET™
- Element Configuration
- Single
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 5mm
- Direnç
- 80mOhm
- Gate Charge Qg Max Vgs
- 16nC @ 5V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Rds On Max Id Vgs
- 80m Ω @ 2A, 10V
- Input Capacitance Ciss Max Vds
- 1350pF @ 25V
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- Kurşunsuz
- Lead Free
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Threshold Voltage
- 1V
- Continuous Drain Current Id
- 4A
- Parça Durumu
- Obsolete
- Pin Sayısı
- 8
- Reach Svhc
- No SVHC
- Drain Currentmax Abs Id
- 4A
- Turn Off Delay Time
- 125 ns
- Voltage Rated Dc
- -30V
- Temel Parça No
- STS4D
- Fet Type
- 2 P-Channel (Dual)
- Montaj
- Surface Mount
- Vgsth Max Id
- 1V @ 250μA
- Terminal Formu
- GULL WING
- Fet Feature
- Standard
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