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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rds On Max Id Vgs
- 90m Ω @ 2A, 10V
- Rise Time
- 18ns
- Max Power Dissipation
- 2W
- Gate Charge Qg Max Vgs
- 10nC @ 10V
- Pin Sayısı
- 8
- Radyasyon Dayanımı
- No
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Application
- SWITCHING
- Terminal Sayısı
- 8
- Seri
- STripFET™
- Fall Time Typ
- 6 ns
- Ambalaj
- Tape & Reel (TR)
- Additional Feature
- LOW THRESHOLD
- Terminal Formu
- GULL WING
- Fet Feature
- Logic Level Gate
- RoHS Durumu
- ROHS3 Compliant
- Pulsed Drain Currentmax Idm
- 16A
- ECCN Kodu
- EAR99
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Gate To Source Voltage Vgs
- 20V
- Drainsource On Resistancemax
- 0.09Ohm
- Montaj
- Surface Mount
- Vgsth Max Id
- 4V @ 250μA
- Drain To Source Voltage Vdss
- 60V
- Transistor Element Material
- SILICON
- Temel Parça No
- STS4D
- Turn On Delay Time
- 7 ns
- Fet Type
- 2 N-Channel (Dual)
- Drain To Source Breakdown Voltage
- 60V
- Turn Off Delay Time
- 17 ns
- Pin Sayısı
- 8
- Drain Currentmax Abs Id
- 4A
- Number Of Elements
- 2
- Continuous Drain Current Id
- 4A
- Parça Durumu
- Obsolete
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Surface Mount
- Input Capacitance Ciss Max Vds
- 315pF @ 25V
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