Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn On Delay Time
- 20 ns
- Fet Type
- 2 N-Channel (Dual)
- Temel Parça No
- STS3D
- Number Of Elements
- 2
- Pin Sayısı
- 8
- Drain Currentmax Abs Id
- 3A
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Continuous Drain Current Id
- 3A
- Parça Durumu
- Obsolete
- Input Capacitance Ciss Max Vds
- 815pF @ 25V
- Power Dissipation
- 2W
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Montaj Tipi
- Surface Mount
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 13.5nC @ 4.5V
- Radyasyon Dayanımı
- No
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation
- 2W
- Rise Time
- 30ns
- Rds On Max Id Vgs
- 80m Ω @ 1.5A, 10V
- Terminal Sayısı
- 8
- Seri
- STripFET™
- Ds Breakdown Voltagemin
- 60V
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- 150°C TJ
- Tepe Reflow Sıcaklığı (°C)
- 260
- JESD-609 Kodu
- e4
- Additional Feature
- LOW THRESHOLD
- Fall Time Typ
- 16 ns
- Ambalaj
- Tape & Reel (TR)
- Montaj
- Surface Mount
- Vgsth Max Id
- 1V @ 250μA
- Transistor Element Material
- SILICON
- Drain To Source Voltage Vdss
- 60V
- ECCN Kodu
- EAR99
- Drainsource On Resistancemax
- 0.1Ohm
- Gate To Source Voltage Vgs
- 20V
- Tepe Reflow Süresi (maks. sn)
- 30
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