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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fall Time Typ
- 7.5 ns
- Ambalaj
- Tape & Reel (TR)
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- JESD-609 Kodu
- e4
- Tepe Reflow Süresi (maks. sn)
- 30
- Akım Değeri
- 3A
- RoHS Durumu
- ROHS3 Compliant
- Terminal Formu
- GULL WING
- Fet Feature
- Logic Level Gate
- Vgsth Max Id
- 2V @ 250μA
- Montaj
- Surface Mount
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Gate To Source Voltage Vgs
- 20V
- Drainsource On Resistancemax
- 0.145Ohm
- Rise Time
- 20ns
- Max Power Dissipation
- 2W
- Rds On Max Id Vgs
- 145m Ω @ 1.5A, 10V
- Gate Charge Qg Max Vgs
- 20nC @ 10V
- Pin Sayısı
- 8
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Radyasyon Dayanımı
- No
- Çalışma Sıcaklığı
- 150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Tepe Reflow Sıcaklığı (°C)
- 260
- Seri
- STripFET™
- Terminal Sayısı
- 8
- Transistor Application
- SWITCHING
- Continuous Drain Current Id
- 3A
- Parça Durumu
- Obsolete
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Surface Mount
- Terminal Kaplaması
- NICKEL PALLADIUM GOLD
- Input Capacitance Ciss Max Vds
- 460pF @ 25V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation
- 2W
- Fet Type
- N and P-Channel
- Voltage Rated Dc
- 100V
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