Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Akım Değeri
- 400mA
- Turn On Delay Time
- 6.7 ns
- Pin Sayısı
- 8
- Vgsth Max Id
- 3.7V @ 250μA
- Terminal Sayısı
- 8
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 400mA
- Pin Sayısı
- 8
- JESD-609 Kodu
- e3
- Tepe Reflow Süresi (maks. sn)
- 30
- Power Dissipation
- 2W
- Pulsed Drain Currentmax Idm
- 1.6A
- Ambalaj
- Tape & Reel (TR)
- Terminal Formu
- GULL WING
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 8 Weeks
- Fet Type
- 2 N-Channel (Dual)
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Gate Charge Qg Max Vgs
- 10nC @ 10V
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- Rise Time
- 4ns
- Drain Currentmax Abs Id
- 0.4A
- ECCN Kodu
- EAR99
- Radyasyon Dayanımı
- No
- Tepe Reflow Sıcaklığı (°C)
- 260
- Montaj
- Surface Mount
- Gate To Source Voltage Vgs
- 30V
- Max Power Dissipation
- 1.6W
- Rds On Max Id Vgs
- 4.5 Ω @ 500mA, 10V
- Fall Time Typ
- 4 ns
- Input Capacitance Ciss Max Vds
- 160pF @ 25V
- Çalışma Sıcaklığı
- 150°C TJ
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Seri
- SuperMESH™
- Number Of Elements
- 2
- Parça Durumu
- Active
- Drain To Source Breakdown Voltage
- 450V
- RoHS Durumu
- ROHS3 Compliant
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