Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Gate Charge Qg Max Vgs
- 6nC @ 10V
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Terminal Formu
- GULL WING
- Transistor Element Material
- SILICON
- Fet Type
- 2 N-Channel (Dual)
- Radyasyon Dayanımı
- No
- Direnç
- 3.8Ohm
- Drain Currentmax Abs Id
- 0.5A
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 8
- Threshold Voltage
- 3.75V
- Element Configuration
- Dual
- Drain To Source Voltage Vdss
- 450V
- Pin Sayısı
- 8
- Vgsth Max Id
- 4.5V @ 50μA
- JESD-609 Kodu
- e4
- Pin Sayısı
- 8
- Pulsed Drain Currentmax Idm
- 2A
- Power Dissipation
- 1.7W
- Ambalaj
- Tape & Reel (TR)
- Kurşunsuz Kodu
- yes
- Transistor Application
- SWITCHING
- Continuous Drain Current Id
- 500mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- ROHS3 Compliant
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 2
- Parça Durumu
- Obsolete
- Drain To Source Breakdown Voltage
- 450V
- Reach Svhc
- No SVHC
- Fet Feature
- Standard
- Temel Parça No
- STS1D
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Surface Mount
- Montaj
- Surface Mount
- Gate To Source Voltage Vgs
- 30V
- Max Power Dissipation
- 1.3W
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
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