Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- 2 N-Channel (Dual)
- Fabrika Tedarik Süresi
- 14 Weeks
- Transistor Element Material
- SILICON
- Terminal Formu
- GULL WING
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Rise Time
- 22ns
- Gate Charge Qg Max Vgs
- 4.6nC @ 5V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Turn Off Delay Time
- 13 ns
- ECCN Kodu
- EAR99
- Direnç
- 21MOhm
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 8
- Vgsth Max Id
- 1V @ 250μA
- Turn On Delay Time
- 4 ns
- Drain To Source Voltage Vdss
- 30V
- Lifecycle Status
- NRND (Last Updated: 8 months ago)
- Terminal Sayısı
- 8
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 10A
- Transistor Application
- SWITCHING
- Ambalaj
- Tape & Reel (TR)
- Pulsed Drain Currentmax Idm
- 40A
- Power Dissipation
- 2.5W
- Tepe Reflow Süresi (maks. sn)
- 30
- Pin Sayısı
- 8
- JESD-609 Kodu
- e4
- Drain To Source Breakdown Voltage
- 30V
- Parça Durumu
- Active
- Number Of Elements
- 2
- Operating Mode
- ENHANCEMENT MODE
- RoHS Durumu
- ROHS3 Compliant
- Montaj Tipi
- Surface Mount
- Kurşunsuz
- Lead Free
- Temel Parça No
- STS10
- Avalanche Energy Rating Eas
- 50 mJ
- Fet Feature
- Logic Level Gate
- Tepe Reflow Sıcaklığı (°C)
- 260
- Max Power Dissipation
- 2.5W
- Gate To Source Voltage Vgs
- 22V
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