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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 70W
- Transistor Application
- SWITCHING
- Rise Time
- 9.6ns
- Fall Time Typ
- 5.2 ns
- Temel Parça No
- STL8
- Radyasyon Dayanımı
- No
- Drainsource On Resistancemax
- 0.05Ohm
- Element Configuration
- Dual
- Gate To Source Voltage Vgs
- 20V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Power Dissipation
- 70W
- Terminal Sayısı
- 6
- Drain To Source Breakdown Voltage
- 100V
- Montaj
- Surface Mount
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Ambalaj
- Cut Tape (CT)
- ECCN Kodu
- EAR99
- Seri
- Automotive, AEC-Q101, STripFET™ III
- Vgsth Max Id
- 3V @ 250μA
- RoHS Durumu
- ROHS3 Compliant
- Montaj Tipi
- Surface Mount
- Input Capacitance Ciss Max Vds
- 970pF @ 25V
- Kılıf / Paket
- 8-PowerVDFN
- Jesd30 Code
- R-PDSO-F6
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 12 Weeks
- Turn On Delay Time
- 8.7 ns
- Fet Feature
- Logic Level Gate
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Additional Feature
- AVALANCHE RATED
- Rds On Max Id Vgs
- 35m Ω @ 4A, 10V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Kurşunsuz
- Lead Free
- Avalanche Energy Rating Eas
- 190 mJ
- Gate Charge Qg Max Vgs
- 20.5nC @ 10V
- Number Of Elements
- 2
- Terminal Formu
- FLAT
- Pin Sayısı
- 8
- Drain To Source Voltage Vdss
- 100V
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