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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Feature
- Logic Level Gate
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Input Capacitance Ciss Max Vds
- 432pF @ 25V
- Kılıf / Paket
- 8-PowerVDFN
- Parça Durumu
- Active
- Jesd30 Code
- R-PDSO-F6
- Fabrika Tedarik Süresi
- 12 Weeks
- Avalanche Energy Rating Eas
- 190 mJ
- Kurşunsuz
- Lead Free
- Additional Feature
- AVALANCHE RATED
- Rds On Max Id Vgs
- 43m Ω @ 3A, 10V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Terminal Formu
- FLAT
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 8.8nC @ 10V
- Number Of Elements
- 2
- Continuous Drain Current Id
- 20A
- Case Connection
- DRAIN
- Fet Type
- 2 N-Channel (Dual)
- Operating Mode
- ENHANCEMENT MODE
- JESD-609 Kodu
- e3
- Drain To Source Voltage Vdss
- 60V
- Pulsed Drain Currentmax Idm
- 26A
- Temel Parça No
- STL7D
- Radyasyon Dayanımı
- No
- Drainsource On Resistancemax
- 0.06Ohm
- Element Configuration
- Dual
- Max Power Dissipation
- 52W
- Terminal Kaplaması
- Matte Tin (Sn)
- Transistor Application
- SWITCHING
- Tepe Reflow Sıcaklığı (°C)
- 260
- Power Dissipation
- 52W
- Terminal Sayısı
- 6
- Drain To Source Breakdown Voltage
- 60V
- Montaj
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate To Source Voltage Vgs
- 20V
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Seri
- Automotive, AEC-Q101, STripFET™ III
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