Volume pricing
- 1+ pcs$4.24
- 10+ pcs$4.00
- 100+ pcs$3.78
- 500+ pcs$3.56
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ürün Tipi
- IGBT Transistors
- Power Max
- 272 W
- Reverse Recovery Time Trr
- 92 ns
- Td Onoff25c
- 18ns/128ns
- Montaj Tipi
- Through Hole
- Collector Emitter Voltage Vceo Max
- 650 V
- Kılıf / Paket
- TO-247-4
- Ambalaj
- Tube
- Ürün Durumu
- Active
- Paket
- Tube
- Technology
- Si
- Seri
- HB2
- Maximum Gate Emitter Voltage
- - 20 V, + 20 V
- Currentcollector Ic Max
- 86 A
- Gate Charge
- 151 nC
- Configuration
- Single
- Birim Ağırlık
- 0.156264 oz
- Continuous Collector Current
- 86
- Switching Energy
- 629μJ (on), 478μJ (off)
- Maks. Çalışma Sıcaklığı
- + 175 C
- Continuous Collector Current At25 C
- 86 A
- Pd Power Dissipation
- 272 W
- Minimum Operating Temperature
- - 55 C
- Montaj Stili
- Through Hole
- Temel Ürün No
- STGW50
- Vceon Max Vge Ic
- 2V @ 15V, 50A
- Test Conditions
- 400V, 50A, 12Ohm, 15V
- Collectoremitter Saturation Voltage
- 1.55
- Tedarikçi Cihaz Paketi
- TO-247-4
- Voltage Collector Emitter Breakdown Max
- 650 V
- RoHS
- Details
- Giriş Tipi
- Standard
- Current Collector Pulsed Icm
- 150 A
- Fabrika Paket Adedi
- 600
- Power Dissipation
- 272
- Igbt Type
- Trench Field Stop
- Çalışma Sıcaklığı
- -55°C ~ 175°C (TJ)
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