STGE50NC60VD

Specifications

Transistor Application

POWER CONTROL

Max Breakdown Voltage

600V

Max Power Dissipation

260W

Input

Standard

Reach Svhc

No SVHC

Number Of Elements

1

Collector Emitter Voltage Vceo

600V

Case Connection

ISOLATED

Turn On Time

61 ns

Yükseklik

12.2mm

Pin Sayısı

4

Collectoremitter Breakdown Voltage

600V

Terminal Pozisyonu

UPPER

Configuration

Single

Collectoremitter Saturation Voltage

2.5V

Uzunluk

38.2mm

Gateemitter Voltagemax

20V

Turn Off Delay Time

140 ns

Currentcollector Ic Max

90A

Turn On Delay Time

43 ns

ECCN Kodu

EAR99

Turn Off Timenom Toff

247 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Cies Vce

4.55nF @ 25V

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Terminal Formu

UNSPECIFIED

Max Collector Current

80A

Terminal Sayısı

4

Pin Sayısı

4

Parça Durumu

Obsolete

Rise Time

17ns

Seri

PowerMESH™

Kurşunsuz

Lead Free

Ntc Thermistor

No

Polaritychannel Type

N-CHANNEL

Input Capacitance

4.55nF

Current Collector Cutoff Max

150μA

Montaj

Chassis Mount, Screw, Surface Mount