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C3 ChipZentronix
STGD3NB60SDT4

STMicroelectronics

STGD3NB60SDT4

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$1.14
  • 10+ pcs$1.08
  • 100+ pcs$1.01
  • 500+ pcs$0.96

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Max Power Dissipation
48W
Current Collector Pulsed Icm
25A
Giriş Tipi
Standard
Max Breakdown Voltage
600V
Terminal Kaplaması
Matte Tin (Sn) - annealed
Akım Değeri
3A
Turn Off Delay Time
1 μs
Voltage Rated Dc
600V
RoHS Durumu
ROHS3 Compliant
Transistor Element Material
SILICON
Gate Charge
18nC
Jesd30 Code
R-PSSO-G2
Vceon Max Vge Ic
1.5V @ 15V, 3A
Temel Parça No
STGD3
Tepe Reflow Sıcaklığı (°C)
260
Reverse Recovery Time
1.7μs
Transistor Application
POWER CONTROL
Fabrika Tedarik Süresi
8 Weeks
Number Of Elements
1
Test Conditions
480V, 3A, 1k Ω, 15V
Collector Emitter Voltage Vceo
600V
Gateemitter Thr Voltagemax
4.5V
Pin Sayısı
3
Collectoremitter Breakdown Voltage
600V
Turn On Time
275 ns
Element Configuration
Single
Gateemitter Voltagemax
20V
Collectoremitter Saturation Voltage
1.5V
Switching Energy
1.15mJ (off)
JESD-609 Kodu
e3
Turn On Delay Time
125 μs
ECCN Kodu
EAR99
Tepe Reflow Süresi (maks. sn)
30
Çalışma Sıcaklığı
175°C TJ
Turn Off Timenom Toff
4800 ns
Nem Hassasiyeti (MSL)
1 (Unlimited)
Radyasyon Dayanımı
No
Terminal Sayısı
2
Pin Sayısı
3
Terminal Formu
GULL WING

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