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STGD10NC60SDT4

STMicroelectronics

STGD10NC60SDT4

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$2.97
  • 10+ pcs$2.81
  • 100+ pcs$2.65
  • 500+ pcs$2.50

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Element Configuration
Single
Collectoremitter Breakdown Voltage
600V
Pin Sayısı
3
Gateemitter Thr Voltagemax
5.75V
Turn On Time
22.5 ns
Terminal Kaplaması
Matte Tin (Sn) - annealed
Case Connection
COLLECTOR
Collector Emitter Voltage Vceo
600V
Test Conditions
390V, 5A, 10 Ω, 15V
Number Of Elements
1
Giriş Tipi
Standard
Max Power Dissipation
60W
Current Collector Pulsed Icm
25A
Transistor Application
POWER CONTROL
Max Breakdown Voltage
600V
Çalışma Sıcaklığı
-55°C~150°C TJ
Nem Hassasiyeti (MSL)
1 (Unlimited)
Turn Off Timenom Toff
560 ns
ECCN Kodu
EAR99
Tepe Reflow Süresi (maks. sn)
30
Power Max
60W
JESD-609 Kodu
e3
Switching Energy
60μJ (on), 340μJ (off)
Gateemitter Voltagemax
20V
Polaritychannel Type
N-CHANNEL
Td Onoff25c
19ns/160ns
Gate Charge
18nC
Seri
PowerMESH™
Parça Durumu
Obsolete
Pin Sayısı
3
Terminal Sayısı
2
Terminal Formu
GULL WING
Max Collector Current
18A
RoHS Durumu
ROHS3 Compliant
Transistor Element Material
SILICON
Radyasyon Dayanımı
No
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Reverse Recovery Time
22 ns
Tepe Reflow Sıcaklığı (°C)
260
Ambalaj
Tape & Reel (TR)

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