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C3 ChipZentronix
STGB30H60DFB

STMicroelectronics

STGB30H60DFB

Single IGBTs

In StockRoHS: Compliant

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

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Technical team support

Specifications

RoHS Durumu
ROHS3 Compliant
Transistor Element Material
SILICON
Terminal Sayısı
2
Max Collector Current
60A
Terminal Formu
GULL WING
Parça Durumu
Active
Igbt Type
Trench Field Stop
Polaritychannel Type
N-CHANNEL
Td Onoff25c
37ns/146ns
Gate Charge
149nC
Jesd30 Code
R-PSSO-G2
Montaj
Surface Mount
Vceon Max Vge Ic
2V @ 15V, 30A
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Reverse Recovery Time
53 ns
Ambalaj
Tape & Reel (TR)
Montaj Tipi
Surface Mount
Temel Parça No
STGB30
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Giriş Tipi
Standard
Max Power Dissipation
260W
Current Collector Pulsed Icm
120A
Transistor Application
POWER CONTROL
Max Breakdown Voltage
600V
Collector Emitter Voltage Vceo
2V
Fabrika Tedarik Süresi
20 Weeks
Number Of Elements
1
Test Conditions
400V, 30A, 10 Ω, 15V
Collectoremitter Breakdown Voltage
600V
Turn On Time
51.1 ns
Case Connection
COLLECTOR
Terminal Pozisyonu
SINGLE
Configuration
SINGLE WITH BUILT-IN DIODE
Power Max
260W
Switching Energy
383μJ (on), 293μJ (off)
ECCN Kodu
EAR99
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Çalışma Sıcaklığı
-55°C~175°C TJ
Nem Hassasiyeti (MSL)
1 (Unlimited)
Turn Off Timenom Toff
223 ns

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