Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Breakdown Voltage
- 425V
- Giriş Tipi
- Standard
- Max Power Dissipation
- 200W
- Current Collector Pulsed Icm
- 80A
- Terminal Kaplaması
- Matte Tin (Sn)
- Turn Off Delay Time
- 2 μs
- Akım Değeri
- 20A
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Gate Charge
- 51nC
- Vceon Max Vge Ic
- 2V @ 4.5V, 20A
- Jesd30 Code
- R-PSSO-G2
- Temel Parça No
- STGB20
- Tepe Reflow Sıcaklığı (°C)
- 245
- Collector Emitter Voltage Vceo
- 375V
- Number Of Elements
- 1
- Test Conditions
- 250V, 20A, 1k Ω, 4.5V
- Transistor Application
- POWER CONTROL
- Element Configuration
- Single
- Turn On Time
- 2900 ns
- Continuous Drain Current Id
- 20A
- Case Connection
- COLLECTOR
- Collectoremitter Breakdown Voltage
- 425V
- Gateemitter Thr Voltagemax
- 2V
- Pin Sayısı
- 3
- JESD-609 Kodu
- e3
- Switching Energy
- 11.8mJ (off)
- Collectoremitter Saturation Voltage
- 2V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn Off Timenom Toff
- 15000 ns
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Tepe Reflow Süresi (maks. sn)
- 30
- ECCN Kodu
- EAR99
- Turn On Delay Time
- 2.3 μs
- Max Collector Current
- 40A
- Terminal Formu
- GULL WING
- Pin Sayısı
- 3
- Terminal Sayısı
- 2
- Radyasyon Dayanımı
- No
- Polaritychannel Type
- N-CHANNEL
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