Volume pricing
- 1+ pcs$1.10
- 10+ pcs$1.04
- 100+ pcs$0.98
- 500+ pcs$0.92
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Gate Charge
- 53nC
- Jesd30 Code
- R-PSSO-G2
- Vceon Max Vge Ic
- 2.5V @ 15V, 12A
- Tepe Reflow Sıcaklığı (°C)
- 245
- Reverse Recovery Time
- 31 ns
- Temel Parça No
- STGB19
- Current Collector Pulsed Icm
- 60A
- Max Power Dissipation
- 130W
- Giriş Tipi
- Standard
- Max Breakdown Voltage
- 600V
- Terminal Kaplaması
- Matte Tin (Sn)
- Turn Off Delay Time
- 97 ns
- Radyasyon Dayanımı
- No
- Terminal Sayısı
- 2
- Pin Sayısı
- 4
- Terminal Formu
- GULL WING
- Max Collector Current
- 40A
- Kurşunsuz
- Lead Free
- Parça Durumu
- Active
- Seri
- PowerMESH™
- Td Onoff25c
- 25ns/97ns
- Polaritychannel Type
- N-CHANNEL
- Montaj
- Surface Mount
- Ambalaj
- Tape & Reel (TR)
- Montaj Tipi
- Surface Mount
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Application
- POWER CONTROL
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 8 Weeks
- Test Conditions
- 390V, 12A, 10 Ω, 15V
- Collector Emitter Voltage Vceo
- 600V
- Gateemitter Thr Voltagemax
- 5.75V
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 600V
- Turn On Time
- 32 ns
- Element Configuration
- Single
- Gateemitter Voltagemax
- 20V
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