STD12NF06T4-1

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Süresi (maks. sn)

30

Drainsource On Resistancemax

0.1 Ω

Operating Mode

ENHANCEMENT MODE

Ihs Manufacturer

STMICROELECTRONICS

Package Shape

RECTANGULAR

Tepe Reflow Sıcaklığı (°C)

260

REACH Uyumluluk Kodu

not_compliant

Case Connection

DRAIN

Power Dissipationmax Abs

30 W

JESD-609 Kodu

e3

Polaritychannel Type

N-CHANNEL

Terminal Kaplaması

MATTE TIN

Pulsed Drain Currentmax Idm

48 A

Part Life Cycle Code

Active

Operating Temperaturemax

175 °C

Rohs Code

Yes

Drain Currentmax Id

12 A

Package Style

IN-LINE

Jesd30 Code

R-PSIP-T3

Ds Breakdown Voltagemin

60 V

Package Description

IN-LINE, R-PSIP-T3

Kurşunsuz Kodu

Yes

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Terminals

3

Avalanche Energy Rating Eas

140 mJ

Terminal Formu

THROUGH-HOLE

Moisture Sensitivity Levels

1

Qualification Status

Not Qualified

Jedec95 Code

TO-251

Number Of Elements

1

Part Package Code

TO-251

Package Body Material

PLASTIC/EPOXY

Transistor Application

SWITCHING

Pin Sayısı

3

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Yüzey Montaj

NO