Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Terminal Sayısı
- 8
- Seri
- STripFET™ II
- Tepe Reflow Sıcaklığı (°C)
- 260
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Radyasyon Dayanımı
- No
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge Qg Max Vgs
- 9nC @ 2.5V
- Pin Sayısı
- 8
- Rds On Max Id Vgs
- 25m Ω @ 3A, 4.5V
- Max Power Dissipation
- 1.5W
- Rise Time
- 25ns
- Gate To Source Voltage Vgs
- 12V
- Drainsource On Resistancemax
- 0.03Ohm
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Vgsth Max Id
- 600mV @ 250μA
- Montaj
- Surface Mount
- Fet Feature
- Logic Level Gate
- Terminal Formu
- GULL WING
- Akım Değeri
- 6A
- RoHS Durumu
- ROHS3 Compliant
- Tepe Reflow Süresi (maks. sn)
- 10
- Additional Feature
- LOW THRESHOLD
- JESD-609 Kodu
- e4
- Ambalaj
- Tape & Reel (TR)
- Fall Time Typ
- 25 ns
- Drain Currentmax Abs Id
- 6A
- Pin Sayısı
- 8
- Number Of Elements
- 2
- Drain To Source Breakdown Voltage
- 30V
- Turn Off Delay Time
- 32 ns
- Temel Parça No
- STC6NF
- Voltage Rated Dc
- 30V
- Turn On Delay Time
- 20 ns
- Fet Type
- 2 N-Channel (Dual)
- Power Dissipation
- 1.5W
- Kılıf / Paket
- 8-TSSOP (0.173, 4.40mm Width)
- Input Capacitance Ciss Max Vds
- 800pF @ 25V
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