STB8NC50

Specifications

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G2

Package Body Material

PLASTIC/EPOXY

Number Of Terminals

2

Package Shape

RECTANGULAR

Yüzey Montaj

YES

Terminal Kaplaması

MATTE TIN

Drainsource On Resistancemax

0.85 Ω

Ihs Manufacturer

STMICROELECTRONICS

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipationmax Abs

135 W

Number Of Elements

1

Transistor Element Material

SILICON

Avalanche Energy Rating Eas

600 mJ

Pulsed Drain Currentmax Idm

32 A

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Polaritychannel Type

N-CHANNEL

Rohs Code

Yes

JESD-609 Kodu

e3

Package Description

D2PAK-3

Package Style

SMALL OUTLINE

REACH Uyumluluk Kodu

not_compliant

Operating Temperaturemax

150 °C

Qualification Status

Not Qualified

Pin Sayısı

3

Part Life Cycle Code

Obsolete

ECCN Kodu

EAR99

Drain Currentmax Id

8 A

Ds Breakdown Voltagemin

500 V