STB85NF55

Specifications

Ihs Manufacturer

STMICROELECTRONICS

Avalanche Energy Rating Eas

980 mJ

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

320 A

Transistor Application

SWITCHING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipationmax Abs

300 W

Transistor Element Material

SILICON

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Package Body Material

PLASTIC/EPOXY

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

Matte Tin (Sn)

Drainsource On Resistancemax

0.008 Ω

Number Of Terminals

2

Package Shape

RECTANGULAR

Yüzey Montaj

YES

Jedec95 Code

TO-263AB

Operating Temperaturemax

175 °C

REACH Uyumluluk Kodu

not_compliant

ECCN Kodu

EAR99

Drain Currentmax Id

80 A

Ds Breakdown Voltagemin

55 V

Kurşunsuz Kodu

Yes

Qualification Status

Not Qualified

Pin Sayısı

4

Part Package Code

D2PAK

Part Life Cycle Code

Active

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Polaritychannel Type

N-CHANNEL

Case Connection

DRAIN

JESD-609 Kodu

e3

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Style

SMALL OUTLINE

Rohs Code

Yes