STB75NF75

Specifications

Avalanche Energy Rating Eas

700 mJ

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

320 A

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipationmax Abs

300 W

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Elements

1

Transistor Element Material

SILICON

Ihs Manufacturer

STMICROELECTRONICS

Terminal Kaplaması

Matte Tin (Sn)

Drainsource On Resistancemax

0.011 Ω

Number Of Terminals

2

Package Shape

RECTANGULAR

Yüzey Montaj

YES

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G2

Package Body Material

PLASTIC/EPOXY

ECCN Kodu

EAR99

Drain Currentmax Id

80 A

Ds Breakdown Voltagemin

75 V

Kurşunsuz Kodu

Yes

Qualification Status

Not Qualified

Pin Sayısı

3

Part Package Code

D2PAK

Part Life Cycle Code

Active

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Jedec95 Code

TO-263AB

REACH Uyumluluk Kodu

not_compliant

Operating Temperaturemax

175 °C

JESD-609 Kodu

e3

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Style

SMALL OUTLINE

Moisture Sensitivity Levels

1

Rohs Code

Yes

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Polaritychannel Type

N-CHANNEL

Case Connection

DRAIN