STB4NC60T4

Specifications

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

16.8 A

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

250 mJ

Transistor Element Material

SILICON

Number Of Elements

1

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipationmax Abs

100 W

Ihs Manufacturer

STMICROELECTRONICS

Terminal Kaplaması

MATTE TIN

Drainsource On Resistancemax

2.2 Ω

Yüzey Montaj

YES

Number Of Terminals

2

Package Shape

RECTANGULAR

Jesd30 Code

R-PSSO-G2

Package Body Material

PLASTIC/EPOXY

Terminal Pozisyonu

SINGLE

Drain Currentmax Id

4.2 A

Ds Breakdown Voltagemin

600 V

ECCN Kodu

EAR99

Pin Sayısı

3

Part Life Cycle Code

Obsolete

Qualification Status

Not Qualified

REACH Uyumluluk Kodu

not_compliant

Operating Temperaturemax

150 °C

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Style

SMALL OUTLINE

JESD-609 Kodu

e3

Rohs Code

Yes

Polaritychannel Type

N-CHANNEL