STB16NB25

Specifications

Ihs Manufacturer

STMICROELECTRONICS

Avalanche Energy Rating Eas

250 mJ

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

64 A

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G2

Package Body Material

PLASTIC/EPOXY

Drainsource On Resistancemax

0.28 Ω

Package Shape

RECTANGULAR

Number Of Terminals

2

Yüzey Montaj

YES

Jedec95 Code

TO-263AB

REACH Uyumluluk Kodu

unknown

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

250 V

Drain Currentmax Id

16 A

Qualification Status

Not Qualified

Part Package Code

D2PAK

Part Life Cycle Code

Obsolete

Pin Sayısı

3

Case Connection

DRAIN

Polaritychannel Type

N-CHANNEL

Package Style

SMALL OUTLINE

Package Description

SMALL OUTLINE, R-PSSO-G2