STB10NC50-1

Specifications

Drain Currentmax Id

10 A

Number Of Terminals

3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Shape

RECTANGULAR

Pin Sayısı

3

Yüzey Montaj

NO

Drainsource On Resistancemax

0.52 Ω

Package Body Material

PLASTIC/EPOXY

Operating Mode

ENHANCEMENT MODE

Part Life Cycle Code

Obsolete

Pulsed Drain Currentmax Idm

40 A

Number Of Elements

1

REACH Uyumluluk Kodu

compliant

ECCN Kodu

EAR99

Polaritychannel Type

N-CHANNEL

Avalanche Energy Rating Eas

550 mJ

Jedec95 Code

TO-262AA

Jesd30 Code

R-PSIP-T3

Case Connection

DRAIN

Terminal Formu

THROUGH-HOLE

Terminal Pozisyonu

SINGLE

Package Style

IN-LINE

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Package Description

IN-LINE, R-PSIP-T3

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Ihs Manufacturer

STMICROELECTRONICS

Part Package Code

TO-262AA

Ds Breakdown Voltagemin

500 V