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Specifications
- Paket
- Bulk
- Nominal Gerilim
- 65 V
- Gain
- 17.5 dB
- Kılıf / Paket
- B2-3
- Ambalaj
- Reel
- Transistor Type
- LDMOS FET
- Output Power
- 180 W
- Rds On Drainsource Resistance
- 1 Ohms
- RoHS
- Details
- Moisture Sensitive
- Yes
- Vds Drainsource Breakdown Voltage
- 65 V
- Tedarikçi Cihaz Paketi
- B2
- Operating Frequency
- 1.47 GHz
- Current Rating Amps
- 1µA
- Vgs Gatesource Voltage
- - 6 V to 10 V
- Montaj Stili
- SMD/SMT
- Power Output
- 180W
- Tip
- RF Power MOSFET
- Temel Ürün No
- RF2L16180
- Montaj Tipi
- Surface Mount
- Maks. Çalışma Sıcaklığı
- + 200 C
- Transistor Polarity
- N-Channel
- Number Of Channels
- 1 Channel
- Fabrika Paket Adedi
- 120
- Frekans
- 1.3GHz ~ 1.7GHz
- Vgs Th Gatesource Threshold Voltage
- 2.5 V
- Ürün Durumu
- Active
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