Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Polaritychannel Type
- N-CHANNEL
- Drain Currentmax Abs Id
- 4A
- Pin Sayısı
- 3
- Drain To Source Voltage Vdss
- 40V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate To Source Voltage Vgs
- 20V
- Additional Feature
- HIGH RELIABILITY
- Transistor Type
- LDMOS
- Temel Parça No
- PD55008
- Ambalaj
- Tube
- Max Output Power
- 8W
- Max Power Dissipation
- 52.8W
- Voltage Rated Dc
- 40V
- Terminal Pozisyonu
- DUAL
- Power Dissipation
- 52.8W
- Operating Mode
- ENHANCEMENT MODE
- Tepe Reflow Sıcaklığı (°C)
- 250
- Montaj
- Surface Mount
- Frekans
- 500MHz
- Akım Değeri
- 4A
- Tepe Reflow Süresi (maks. sn)
- 30
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Continuous Drain Current Id
- 4A
- Transistor Application
- AMPLIFIER
- Min. Çalışma Sıcaklığı
- -65°C
- Case Connection
- SOURCE
- Voltage Test
- 12.5V
- Jesd30 Code
- R-PDSO-F2
- Fabrika Tedarik Süresi
- 25 Weeks
- Number Of Elements
- 1
- Element Configuration
- Single
- JESD-609 Kodu
- e3
- Kılıf / Paket
- PowerSO-10 Exposed Bottom Pad
- Maks. Çalışma Sıcaklığı
- 165°C
- Drain To Source Breakdown Voltage
- 40V
- Gain
- 17dB
- Kurşunsuz
- Lead Free
- Parça Durumu
- Active
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