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Specifications
- Transistor Type
- LDMOS
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Akım Değeri
- 9A
- Max Power Dissipation
- 100W
- Temel Parça No
- LET16045
- Jesd30 Code
- R-PDFM-F2
- Power Dissipation
- 100W
- Element Configuration
- Single
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- Continuous Drain Current Id
- 9A
- ECCN Kodu
- EAR99
- Drain Currentmax Abs Id
- 9A
- Voltage Test
- 28V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Maks. Çalışma Sıcaklığı
- 150°C
- Terminal Pozisyonu
- DUAL
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Parça Durumu
- Obsolete
- Transistor Application
- AMPLIFIER
- Polaritychannel Type
- N-CHANNEL
- Pin Sayısı
- 243
- Min. Çalışma Sıcaklığı
- -65°C
- Power Output
- 45W
- Frekans
- 1.6GHz
- Terminal Formu
- FLAT
- Drain To Source Breakdown Voltage
- 80V
- Kılıf / Paket
- M243
- Ambalaj
- Bulk
- Gate To Source Voltage Vgs
- 15V
- Operating Mode
- ENHANCEMENT MODE
- Terminal Sayısı
- 2
- Case Connection
- SOURCE
- Current Test
- 400mA
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 2
- Drain To Source Voltage Vdss
- 80V
- Gain
- 16dB
- Montaj
- Screw
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