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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS
- Details
- Paket
- Tray
- Kılıf / Paket
- Module
- Vf Forward Voltage
- 4.3 V
- Gate Charge Qg Max Vgs
- 944nC @ 18V
- Technology
- Silicon Carbide (SiC)
- Vgs Th Gatesource Threshold Voltage
- 4.4 V
- Vds Drainsource Breakdown Voltage
- 1.2 kV
- Rds On Drainsource Resistance
- 2.55 mOhms
- Ürün Tipi
- Discrete Semiconductor Modules
- Power Max
- 704W (Tj)
- Drain To Source Voltage Vdss
- 1200V (1.2kV)
- Pd Power Dissipation
- 704 W
- Minimum Operating Temperature
- - 40 C
- Id Continuous Drain Current
- 379 A
- Tedarikçi Cihaz Paketi
- ACEPACK
- Current Continuous Drain Id25
- 379A (Tj)
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
- Configuration
- 6 N-Channel
- Temel Ürün No
- ADP360120
- Rds On Max Id Vgs
- 3.45mOhm @ 360A, 18V
- Montaj Tipi
- Chassis Mount
- Vgsth Max Id
- 4.4V @ 40mA
- Tip
- SiC Power MOSFET Module
- Maks. Çalışma Sıcaklığı
- + 175 C
- Birim Ağırlık
- 1.609 lbs
- Ambalaj
- Tray
- Vgs Gatesource Voltage
- - 10 V, + 22 V
- Montaj Stili
- Screw Mounts
- Input Capacitance Ciss Max Vds
- 28070pF @ 800V
- Ürün Durumu
- Active