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PT100MF1MP1

Sharp Microelectronics

PT100MF1MP1

Phototransistors

RoHS: Compliant

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Specifications

Max Breakdown Voltage
35V
Voltage Collector Emitter Breakdown Max
35V
Rise Time
2ms
Lens Style
Domed
Max Power Dissipation
75mW
Ambalaj
Tape & Reel (TR)
Max Collector Current
20mA
Polarity
NPN
Number Of Elements
1
Pin Sayısı
2
Current Dark Id Max
100nA
Yayın Yılı
2007
Uzunluk
3mm
Collector Emitter Voltage Vceo
6V
Power Max
75mW
Number Of Channels
1
Orientation
Universal
Fall Time Typ
2 ms
Kılıf / Paket
2-SMD, No Lead
Radyasyon Dayanımı
No
Collectoremitter Breakdown Voltage
35V
Çalışma Sıcaklığı
-30°C~85°C TA
Currentcollector Ic Max
20mA
Parça Durumu
Obsolete
Genişlik
1.5mm
Montaj
Surface Mount
Maks. Çalışma Sıcaklığı
85°C
Viewing Angle
30°
Power Dissipation
75mW
Dark Current
100nA
Montaj Tipi
Surface Mount
Min. Çalışma Sıcaklığı
-30°C
RoHS Durumu
RoHS Compliant
Yükseklik
2.2mm
Nem Hassasiyeti (MSL)
2 (1 Year)

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