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Specifications
- JESD-609 Kodu
- e0
- Diode Element Material
- SILICON
- HTS Kodu
- 8541.10.00.80
- Additional Feature
- HIGH RELIABILITY
- Reverse Voltage
- 110 V
- Reverse Recovery Time Trr
- 25 ns
- Voltage Forward Vf Max If
- 975 mV @ 2.5 A
- Tedarikçi Cihaz Paketi
- A, Axial
- Peak Reverse Current
- 1 µA
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Peak Nonrepetitive Surge Current
- 35 A
- Capacitance Vr F
- 25pF @ 10V, 1MHz
- Ambalaj
- Bulk
- Reflow Temperaturemax S
- NOT SPECIFIED
- Reverse Recovery Timemax
- 0.025 µs
- Montaj Tipi
- Through Hole
- Package Body Material
- GLASS
- Forward Current
- 1 A
- Maks. Çalışma Sıcaklığı
- 175 °C
- ECCN Kodu
- EAR99
- Diode Type
- RECTIFIER DIODE
- Output Currentmax
- 1 A
- Jesd30 Code
- O-LELF-R2
- Operating Temperaturemin
- -65 °C
- Voltage Dc Reverse Vr Max
- 100 V
- REACH Uyumluluk Kodu
- compliant
- Reference Standard
- MIL-19500
- Qualification Status
- Qualified
- Reverse Recovery Time
- 25
- Schedule B
- 8541100080, 8541100080/8541100080/8541100080/8541100080/8541100080
- Terminal Pozisyonu
- END
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Kılıf / Paket
- A, Axial
- Pin Sayısı
- 2
- Max Junction Temperature Tj
- 175 °C
- Risk Rank
- 5.58
- Operating Temperaturemax
- 175 °C
- Forward Voltage
- 975 mV
- Repetitive Peak Reverse Voltage
- 100
- Paket
- Bulk