JANTX2N6849

Specifications

Terminal Pozisyonu

BOTTOM

Maximum Drain Source Resistance Mohm

320@10V

Package Shape

ROUND

JESD-609 Kodu

e0

Process Technology

HEXFET

Maximum Continuous Drain Current A

6.5

Number Of Elements Per Chip

1

Typical Gate Charge Vgs Nc

34.8(Max)@10V

Package Height

4.54(Max)

Turnon Timemax Ton

200 ns

Drainsource On Resistancemax

0.32 Ω

Maximum Gate Source Leakage Current Na

100

Maximum Power Dissipation Mw

25000

Risk Rank

5.17

Typical Turnon Delay Time Ns

60(Max)

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Channel Mode

Enhancement

Terminal Formu

WIRE

Package Description

HERMETIC SEALED, TO-39, 3 PIN

Minimum Gate Threshold Voltage V

2

Maximum Gate Threshold Voltage V

4

Transistor Element Material

SILICON

Number Of Terminals

3

Maximum Positive Gate Source Voltage V

20

Standard Package Name

TO-205-AF

Automotive

No

Minimum Operating Temperature C

-55

Turnoff Timemax Toff

280 ns

Part Life Cycle Code

Contact Manufacturer

Typical Fall Time Ns

140(Max)

Typical Turnoff Delay Time Ns

140(Max)

Maximum Drain Source Voltage V

100

Maximum Gate Source Voltage V

±20

Additional Feature

RADIATION HARDENED

Supplier Package

TO-39

Maximum Pulsed Drain Current Tc25c A

25

Supplier Temperature Grade

Military

Operating Temperaturemin

-55 °C

Eccn Us

EAR99