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Specifications
- Type Of Transistor
- N-MOSFET
- Rated Current
- 5 A
- Package Style
- IN-LINE
- Diode Element Material
- SILICON
- Forward Current
- 4A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Dielectric Strength
- 2000 (50 Hz / 5 s) V
- Mounting Diameter
- 30 mm
- Part Life Cycle Code
- Contact Manufacturer
- Yüzey Montaj
- NO
- Terminal Formu
- WIRE
- Mounting
- THT
- Peak Nonrepetitive Surge Current
- 200A
- Button Shape
- ring - cone; button flat
- Package Description
- R-PSIP-W4
- Package Body Material
- PLASTIC/EPOXY
- Led Life
- ≥40000 hours
- Switch Type
- GQ30 series non-illuminated vandal-resistant button
- ECCN Kodu
- EAR99
- Button Head And Shape
- flat ring and flat protruding button
- Indicator Type
- dot
- Ambalaj
- Bulk
- Number Of Switching Cycles Electrical
- ≥50000
- Element Configuration
- Single
- Voltage Forward Vf Max If
- 1V @ 3A
- Nonrep Pk Forward Currentmax
- 200 A
- Led Working Life
- 40000 hours min
- Ihs Manufacturer
- SECOS CORP
- Configuration
- BRIDGE, 4 ELEMENTS
- Genişlik
- 6.35mm
- JESD-609 Kodu
- e0
- Diode Type
- BRIDGE RECTIFIER DIODE
- Terminal Pozisyonu
- SINGLE
- Pin Sayısı
- 4
- Illuation Color
- greemin
- Package Shape
- RECTANGULAR
- Current Reverse Leakage Vr
- 10μA @ 600V
- Jesd30 Code
- R-PSIP-W4
- Nominal Voltage
- 250 V
- Average Rectified Current
- 4A
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