
Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Jesd30 Code
- R-PSIP-T10
- Vce Saturation Max Ib Ic
- 150mV @ 15mA, 1.5A
- Terminal Pozisyonu
- SINGLE
- Power Max
- 3.2W
- Dc Current Gain Hfe Min Ic Vce
- 700 @ 1A 1V
- Collector Emitter Voltage Vceo
- 150mV
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Number Of Elements
- 2
- Polaritychannel Type
- NPN
- RoHS Durumu
- RoHS Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Current Collector Cutoff Max
- 10μA ICBO
- Terminal Sayısı
- 10
- Ambalaj
- Bulk
- HTS Kodu
- 8541.29.00.95
- Çalışma Sıcaklığı
- 150°C TJ
- Kurşunsuz Kodu
- yes
- Max Power Dissipation
- 3.2W
- Max Collector Current
- 6A
- Transistor Element Material
- SILICON
- Collectoremitter Breakdown Voltage
- 60V
- Kılıf / Paket
- 10-SIP
- Montaj
- Through Hole
- Yayın Yılı
- 2001
- REACH Uyumluluk Kodu
- unknown
- Transistor Type
- 2 NPN Darlington (Dual)
- Qualification Status
- Not Qualified
- Pin Sayısı
- 10
- Fabrika Tedarik Süresi
- 36 Weeks
- ECCN Kodu
- EAR99
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Montaj Tipi
- Through Hole
- Parça Durumu
- Active
Related Products
Echelon Corporation
15400R-57B
Arrays BJT Transistors
Echelon Corporation
15401R-47BP
Arrays BJT Transistors
Echelon Corporation
15402R-47B
Arrays BJT Transistors
Central Semiconductor Corp
2N2060
Arrays BJT Transistors
Central Semiconductor Corp
2N2060A
Arrays BJT Transistors
Microsemi Corporation
2N2060L
Arrays BJT Transistors
Central Semiconductor Corp
2N2060M
Arrays BJT Transistors
Seme LAB
2N2223
Arrays BJT Transistors

