
Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Max
- 4W
- Additional Feature
- BUILT IN BIAS RESISTANCE RATIO IS 0.05
- Terminal Pozisyonu
- SINGLE
- Vce Saturation Max Ib Ic
- 2V @ 10mA, 3A
- Collector Base Voltage Vcbo
- 70V
- Dc Current Gain Hfe Min Ic Vce
- 1000 @ 3A 4V
- Collector Emitter Voltage Vceo
- 2V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Number Of Elements
- 4
- Kurşunsuz
- Lead Free
- Ambalaj
- Bulk
- Terminal Sayısı
- 10
- Current Collector Cutoff Max
- 100μA ICBO
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- RoHS Compliant
- Kurşunsuz Kodu
- yes
- Çalışma Sıcaklığı
- 150°C TJ
- Polarity
- NPN
- Transistor Element Material
- SILICON
- Max Collector Current
- 4A
- Max Power Dissipation
- 4W
- REACH Uyumluluk Kodu
- unknown
- Yayın Yılı
- 1999
- Montaj
- Through Hole
- Kılıf / Paket
- 10-SIP
- Collectoremitter Breakdown Voltage
- 60V
- Emitter Base Voltage Vebo
- 6V
- Transistor Type
- 4 NPN Darlington (Quad)
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 36 Weeks
- Qualification Status
- Not Qualified
- Pin Sayısı
- 10
- Collectoremitter Saturation Voltage
- 2V
- Parça Durumu
- Active
- Montaj Tipi
- Through Hole
- Configuration
- COMPLEX
- Pin Sayısı
- 10
Related Products
Echelon Corporation
15400R-57B
Arrays BJT Transistors
Echelon Corporation
15401R-47BP
Arrays BJT Transistors
Echelon Corporation
15402R-47B
Arrays BJT Transistors
Central Semiconductor Corp
2N2060
Arrays BJT Transistors
Central Semiconductor Corp
2N2060A
Arrays BJT Transistors
Microsemi Corporation
2N2060L
Arrays BJT Transistors
Central Semiconductor Corp
2N2060M
Arrays BJT Transistors
Seme LAB
2N2223
Arrays BJT Transistors

