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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 12 Weeks
- Drain Currentmax Abs Id
- 4A
- Power Max
- 4W
- Operating Mode
- ENHANCEMENT MODE
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Transistor Application
- SWITCHING
- Ds Breakdown Voltagemin
- 60V
- Kılıf / Paket
- 12-SIP
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz Kodu
- yes
- Fet Feature
- Standard
- Ambalaj
- Tube
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Drain To Source Voltage Vdss
- 60V
- Fet Type
- 3 N and 3 P-Channel (3-Phase Bridge)
- Pin Sayısı
- 12
- Drainsource On Resistancemax
- 0.55Ohm
- Qualification Status
- Not Qualified
- Yayın Yılı
- 2001
- Max Power Dissipation
- 4W
- ECCN Kodu
- EAR99
- RoHS Durumu
- RoHS Compliant
- Configuration
- COMPLEX
- Rds On Max Id Vgs
- 550 Ω @ 2A, 4V
- Number Of Elements
- 6
- Montaj Tipi
- Through Hole
- Parça Durumu
- Active
- Pulsed Drain Currentmax Idm
- 8A
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Terminal Sayısı
- 12
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 4A
- Montaj
- Through Hole
- Jesd30 Code
- R-PSIP-T12
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Vgsth Max Id
- 2V @ 250μA
- Çalışma Sıcaklığı
- 150°C TJ
- Input Capacitance Ciss Max Vds
- 150pF @ 10V
- Terminal Pozisyonu
- SINGLE
- HTS Kodu
- 8541.29.00.95
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