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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Parça Durumu
- Active
- Pulsed Drain Currentmax Idm
- 8A
- Current Collector Cutoff Max
- 10μA ICBO
- Collectoremitter Breakdown Voltage
- 120V
- Number Of Elements
- 4
- Montaj Tipi
- Through Hole
- Terminal Pozisyonu
- SINGLE
- Avalanche Energy Rating Eas
- 16 mJ
- HTS Kodu
- 8541.29.00.95
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 12
- Dc Current Gain Hfe Min Ic Vce
- 2000 @ 3A 2V
- Jesd30 Code
- R-PSIP-T12
- Montaj
- Through Hole
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Çalışma Sıcaklığı
- 150°C TJ
- Kurşunsuz Kodu
- yes
- Collector Emitter Voltage Vceo
- 1.5V
- Ambalaj
- Tube
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Vce Saturation Max Ib Ic
- 1.5V @ 3mA, 3A
- Power Max
- 5W
- Fabrika Tedarik Süresi
- 12 Weeks
- Transistor Type
- 4 NPN Darlington (Quad)
- Drain Currentmax Abs Id
- 4A
- Operating Mode
- ENHANCEMENT MODE
- Polaritychannel Type
- N-CHANNEL
- Ds Breakdown Voltagemin
- 100V
- Kılıf / Paket
- 12-SIP
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Max Power Dissipation
- 5W
- Yayın Yılı
- 2001
- ECCN Kodu
- EAR99
- Max Collector Current
- 5A
- RoHS Durumu
- RoHS Compliant
- Configuration
- COMPLEX
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 12
- Drainsource On Resistancemax
- 0.55Ohm
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