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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 2V @ 250μA
- Qualification Status
- Not Qualified
- Power Max
- 5W
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Input Capacitance Ciss Max Vds
- 790pF @ 10V
- Transistor Element Material
- SILICON
- Jesd30 Code
- R-PSFM-T12
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- RoHS Compliant
- Montaj Tipi
- Through Hole
- Fet Feature
- Logic Level Gate
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tube
- Terminal Pozisyonu
- SINGLE
- Rds On Max Id Vgs
- 220m Ω @ 3A, 10V
- Çalışma Sıcaklığı
- 150°C TJ
- Configuration
- COMMON SOURCE, 5 ELEMENTS WITH BUILT-IN DIODE
- Parça Durumu
- Not For New Designs
- Drain Currentmax Abs Id
- 5A
- HTS Kodu
- 8541.29.00.95
- Continuous Drain Current Id
- 5A
- Drain To Source Voltage Vdss
- 60V
- Kılıf / Paket
- 12-SIP
- Operating Mode
- ENHANCEMENT MODE
- Fabrika Tedarik Süresi
- 12 Weeks
- Case Connection
- ISOLATED
- Fet Type
- 5 P-Channel, Common Source
- ECCN Kodu
- EAR99
- Drainsource On Resistancemax
- 0.22Ohm
- Yayın Yılı
- 2001
- Ds Breakdown Voltagemin
- 60V
- Max Power Dissipation
- 5W
- Number Of Elements
- 5
- Montaj
- Through Hole
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Pulsed Drain Currentmax Idm
- 10A
- Terminal Sayısı
- 12
- Pin Sayısı
- 12
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