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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Vgsth Max Id
- 2V @ 250μA
- Qualification Status
- Not Qualified
- Power Max
- 4.8W
- Input Capacitance Ciss Max Vds
- 320pF @ 10V
- Transistor Element Material
- SILICON
- Kurşunsuz Kodu
- yes
- Jesd30 Code
- R-PSFM-T15
- Montaj Tipi
- Through Hole
- RoHS Durumu
- RoHS Compliant
- Ambalaj
- Tube
- Fet Feature
- Logic Level Gate
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 300m Ω @ 3A, 4V
- Çalışma Sıcaklığı
- 150°C TJ
- Terminal Pozisyonu
- SINGLE
- Fabrika Tedarik Süresi
- 12 Weeks
- Case Connection
- ISOLATED
- Drain Currentmax Abs Id
- 5A
- Parça Durumu
- Active
- Configuration
- 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- HTS Kodu
- 8541.29.00.95
- Kılıf / Paket
- 15-SIP Exposed Tab, Formed Leads
- Drain To Source Voltage Vdss
- 60V
- Continuous Drain Current Id
- 5A
- Operating Mode
- ENHANCEMENT MODE
- Drainsource On Resistancemax
- 0.3Ohm
- Yayın Yılı
- 2001
- Fet Type
- 4 N-Channel (Half Bridge)
- ECCN Kodu
- EAR99
- Polaritychannel Type
- P-CHANNEL
- Number Of Elements
- 4
- Montaj
- Through Hole
- Ds Breakdown Voltagemin
- 60V
- Max Power Dissipation
- 4.8W
- Pulsed Drain Currentmax Idm
- 8A
- Terminal Sayısı
- 15
- Pin Sayısı
- 15
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